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M3060C, MF3060C & MI3060C
Vishay General Semiconductor
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Document Number: 89009
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 μs pulse
width, 1 % duty cycle
(2) Pulse test: Pulse width ≤
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
(1)
IF
= 5.0 A
IF
= 7.5 A
IF
= 15 A
TJ
= 25 °C
VF
0.482
0.520
0.614
-
-
0.72
V
IF
= 5.0 A
IF
= 7.5 A
IF
= 15 A
TJ
= 125 °C
0.387
0.443
0.547
-
-
0.62
Reverse current per diode
(2)
rated VR
TJ
= 25 °C
TJ
= 125 °C
IR
50
23
350
45
μA
mA
Typical junction capacitance per diode 4.0 V, 1 MHz
TJ
= 25 °C C
J
540 - pF
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL M3060C MF3060C MI3060C UNIT
Thermal resistance per diode RθJC
2.0 5.5 2.0 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB M3060C-E3/4W 1.85 4W 50/tube Tube
ITO-220AB MF3060C-E3/4W 1.75 4W 50/tube Tube
TO-262AA MI3060C-E3/4W 1.46 4W 50/tube Tube
Figure 1. Forward Current Derating Curve
0
6
12
18
24
30
0 50 100 150
A
v
erage For
w
ard C
u
rrent (A)
Case Temperature (°C)
Resistive or Inductive Load
MF3060C
M(I)3060C
Figure 2. Forward Power Loss Characteristics Per Diode
0
3
2
1
5
4
6
8
9
7
10
11
042
6128
10 14 16 18
Average Forward Current (A)
A
v
erage Po
w
er Loss (
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T tp
T
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